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SPM測定サンプルデータ

USM1100

STM Topographic Image of Cinchonine molecules on Pt (100)

STM Topographic Image of Cinchonine molecules on Pt (100) -- USM1100 Sample 1

Temperature: Room Temperature
Field of View: 25nm × 25nm Yutaka Miyatake
Unisoku Co., Ltd.



USM1200

STM Topographic Image of Si (100)

STM Topographic Image of Si (100) -- USM1200 Sample 1

Temperature: 63K
Field of View: 3nm × 3nm Dr. YOKOYAMA in Yokohama City Univ.



STM Molecular structure and Topographic Image of COOH-Porphyrin tetramer

STM Molecular structure and Topographic Image of COOH-Porphyrin tetramer -- USM1200 Sample 2

Temperature: 63K
Field of View: 11nm × 11nm Dr. YOKOYAMA in Yokohama City Univ.



USM1300

STM Topographic Image of Si (111)

STM Topographic Image of Si (111) -- USM1300 Sample 1

Temperature: 4.2K
Bias voltage: 0.84V
Tunnel current: 1.04nA
Field of veiw: 10nm × 10nm Yutaka Miyatake
Unisoku Co., Ltd.



STM Topographic Image of vortex lattice of a superconductor NbSe2

STM Topographic Image of vortex lattice of a superconductor NbSe 2 -- USM-1300 Sample 2

Temperature: 400mK
Field: 0.5T
Environment: UHV
Field of View: 250nm × 250nm Dr. HANAGURI
Magnetic Materials Laboratory, RIKEN



STM Topographic Image and STS data of Cleaved NBS2

STM Topographic Image and STS data of Cleaved NBS 2 -- USM1300 Sample 3

Temperature: 440mK
Field of View: 7.3nm × 7.3nm Dr. HANAGURI in Magnetic Materials Laboratory, RIKEN



Si (111) dI/dV topographic image in magnetic field (4.2K, 7t) by USM1300S 4He

Si (111) dI/dV image in magnetic field (4.2K, 7T) by USM1300S 4He -- USM1300 Sample 4

Topo image
Sample bias 2.1V
Tunnel current 1.24nA



Topo image -- USM1300 Sample 4

dI/dV image
Sample bias 1.2V
Tunnel current 1.24nA



dI/dV image -- USM1300 Sample 4

dI/dV-V curve on Si atoms



STM topographic image in 11Tesla at 400mK by USM1300S 3He

STM image in 11Tesla at 400mK by USM1300S 3He -- USM1300 Sample 5

Scan size: 11.7
Sample bias: 2.07V
Tunnel current: 740pA



Si (001) STM topographic image by USM1300S 3He

Si (001) STM image by USM1300S 3He -- USM1300 Sample 6

Add the atomic structure model
N type Si(100)
0.008-0.015ohmcm, V=+1.7V
I=70pA, 668.7mK Keisuke Sagisaka
NIMS, Fujita group
published in VOLUME 91, NUMBER 14, 146103,
PHYSICAL REVIEW LETTERS



Standing wave on Cu (111) surface by USM-1300S VTI

Standing wave on Cu (111) surface by USM-1300S VTI -- USM1300 Sample 7 Yukio Hasegawa group
Univ. of Tokyo, Solid State Physics


CoPc多層膜のSTM像とspin-flip IETS

CoPc多層膜のSTM像とspin-flip IETS

(a)-(d): CoPc多層膜のSTM像とspin-flip IETS
観察温度 0.4K 磁場 1.5T (USM1300-3He) Prof. Qi Kun Xue
Tsinghua University



Si (111) 上のPbの√7×√3超構造のSTM像

Si (111) 上のPbの√7×√3超構造のSTM像

Si (111) 上のPbの√7×√3超構造のSTM像



上記表面の超低温下での超伝導ギャップの温度依存性

上記表面の超低温下での超伝導ギャップの温度依存性



超伝導ギャップ幅の外部磁場強度依存性

超伝導ギャップ幅の外部磁場強度依存性 Prof. Qi Kun Xue
Tsinghua University



USM1400

STM Topographic Image of Si (111) surface

STM Topographic Image of Si (111) surface -- USM1400 Sample 1

Temperature: 83K
Scan area: 21.72nm × 21.72nm
Sample bias: 1.8V
Tunnel current: 0.54nA Yuko Yamamoto
Unisoku Co., Ltd.



STM Topographic Image of Si (100) surface

STM Topographic Image of Si (100) surface -- USM1400 Sample 2

Temperature: 83K
Scan area: 15.5nm × 4.3nm
Sample bias: 1.2V
Tunnel current: 1.0nA Yuko Yamamoto
Unisoku Co., Ltd.



STM Topographic Image of Si (100) surface

STM Topographic Image of Si (100) surface -- USM1400 Sample 3

Sample: Si (100)
Temperature: 83K
Scan area: 28.4nm × 28.4nm
Sample bias: -2V
Tunnel current: 0.2nA Yuko Yamamoto
Unisoku Co., Ltd.



STM Topographic Image of Si (100) surface

STM Topographic Image of Si (100) surface -- USM1400 Sample 4

Temperature: 83K
Scan area: 28.4nm × 28.4nm
Sample bias: 2V
Tunnel current: 0.2nA



USM1400-4P

4 point measurement

STM Image of 4 point measurement by USM1400-4P Unisoku Co., Ltd.

STM image on HOPG at 6.5K

STM Image of STM image on HOPG at 6.5K by USM1400-4P Unisoku Co., Ltd.

Resistance of micro structure

STM Image of Resistance of micro structure by USM1400-4P Unisoku Co., Ltd.

超高真空4プローブ表面電気特性測定装置 UMP1000-4P

Four probes over carbon nanotube

Four probes over carbon nanotube by USM1400-4P

Four-terminal Resistance measurement on Carbon Nanotube
Probe distance: <10μm Prof. Sumiyama
Nagoya Institure of Technology



SEM Image of 4 Probes bellow 10K

SEM Image of 4 Probes below 10K by USM1400-4P

Scan area: 1mm × 1mm
Temprature: 6.5K Yutaka Miyatake
Unisoku Co., Ltd.



SEM Image of 4 Probes bellow 10K

SEM Image of 4 Probes below 10K by USM1400-4P

Scan area: 15μm
Temprature: 6.5K Yutaka Miyatake
Unisoku Co., Ltd.



Cutting CNT by 2 probes

Cutting CNT by 2 probes -- ナノプローブ表面電気特性測定装置 Sample 4-1 Cutting CNT by 2 probes -- ナノプローブ表面電気特性測定装置 Sample 4-2 Cutting CNT by 2 probes -- ナノプローブ表面電気特性測定装置 Sample 4-3 Cutting CNT by 2 probes -- ナノプローブ表面電気特性測定装置 Sample 4-4

Applying a voltage across the probes M.Yoshimura, Ueda Lab.,
Toyota Technological Institute



高真空STM 特注品

STM image of Mn Porpyrin molecules on Au (111)

STM image of Mn Porpyrin molecules on Au (111) -- 高真空STMシステム HS-1000 1

scan size: 10nm × 10nm 1.2V 10pA Unisoku Co., Ltd.



STM image of Au (111) herringbone structure

STM image of Au (111) herringbone structure -- 高真空STMシステム HS-1000 2

scan size: 180nm × 90nm Unisoku Co., Ltd.



STM atomic image of Si (111) 7 × 7 structure

STM Topographic Image of STM atomic image of Si (111) 7×7 structure -- 高真空STMシステム HS-1000 3

scan size: 12.8nm × 5.1nm Dr. HANAGURI
in Magnetic Materials Laboratory, RIKEN



STM atomic image of √3 × √3-Ag structure on Si (111)

STM Topographic Image of STM atomic image of radical 3 times radical 3-Ag structure on Si (111) -- 高真空STMシステム HS-1000 4

scan size 12nm × 12nm -0.4V 0.7nA Unisoku Co., Ltd.



超高真空AFM 特注品

AFM Topographic Image of Si (111) surface

AFM Topographic Image of Si (111) surface -- HS-2000 Sample 1

div: Si (111) 7 × 7 by NC-AFM
Scan size: 13nm × 13nm
Cantilever: Piezo Resistive type (made by SII)
Frequency shift: -33Hz Ichiro Shiraki
NIMS, Miki group